ULTRAVIOLET LIGHT EMITTING DIODE

摘要

PROBLEM TO BE SOLVED: To improve the light emitting efficiency of an ultraviolet light emitting diode without largely impairing a monochromaticity of a light emitting spectrum and low resistivity. SOLUTION: The ultraviolet emitting diode comprises an Alx Ga1-x N (x>0.1) layer having an n-type clad layer 4 and a p-type clad layer 5, an Aly Ga1-y N (x>y>0) layer having a barrier layer 2 of a quantum well structure, and an Alz Ga1-z N (y>z>0) layer having a quantum well layer of a quantum well structure 1. The emitting diode further comprises an n-type Alx 'Ga1-x 'N (x'>x+0.1) layer as an n-type blocking layer 6 between the clad layer 4 and the well structure 1, and a p-type Alx" Ga1-x" N (x">x+0.1) layer as a blocking layer 7 between the clad layer 5 and the structure 1.