| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser device that can be used as a light source of an optical disc system and has excellent laser oscillation characteristics in a gallium nitride base semiconductor laser device. SOLUTION: In the semiconductor laser device, a first conductivity clad layer, an active layer, a second conductivity guide layer or clad layer and a current preventing layer are laminated in sequence. A stripe-shaped trench narrower than the active layer in the current preventing layer is formed in the current blocking layer so that it reaches the second conductivity guide layer or clad layer. At least the second conductivity clad layer and a second conductivity contact layer are formed on the stripe-shaped trench and the current blocking layer. The width of the stripe region ranges from 0.2μm to 1.8μm.
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