SELF-ALIGNED, TRENCHLESS MAGNETORESISTIVE RANDOM-ACCESS MEMORY (MRAM) STRUCTURE WITH SIDEWALL CONTAINMENT OF MRAM STRUCTURE

摘要

This invention pertains to a method of fabricating a trenchless MRAM structure and to the resultant MRAM Structure. The MRAM structure of the invention has a pinned layer formed within protective sidewalls formed over a substrate. The protective sidewalls facilitate formation of the MRAM structure by a self-aligning process.