| 摘要 |
The invention concerns a device for rectifying voltage comprising two input terminals (BE1, BE2) for an alternating voltage, means for rectifying produced by technology integrated inside a semiconductor substrate (SBS), and two output terminals (BS1, BS2) for a rectified voltage, one of these output terminals (BS1) being connected at the substrate. The rectifying means comprise a couple of first field-effect transistors with insulated grids (T1, T2) diode-mounted with one of their electrodes (D1, D2) connected to the substrate, and a couple of field-effect transistors with insulated grids (T3, T4) respectively arranged in polarised semiconductor tanks (CS3, CS4) with the grids connected crosswise on the two input terminals, the first and second transistors having channels of opposite types and a drain/source voltage in conduction less than a predetermined voltage. |
