| 摘要 |
<p>A mask is placed over a center portion of a deposition source to limit angle of the flux from the source. A substrate (102A) or device with a vertical surface (104A) (referenced to a major surface of the substrate or device) is rotated past the deposition source (112A) to coat the vertical surface with material from the source. In a particular embodiment, the source is a gold sputtering target and a mirror is formed on a vertical surface of a MEMS structure having a depth of about 70-75 microns and a set-back of about 200-250 microns by sputtering about 1000 Angstroms of gold onto the vertical surface.</p> |
