| 摘要 |
<p>A metallic very thin film, a metallic very thin film multilayer body, and a method for manufacturing the metallic very thin film or the metallic very thin film laminate. The metallic very thin film or the metallic very thin film multilayer body is manufactured by forming, on a conductive base a dielectric thin film having a film thickness such that a tunnel effect between metals through the dielectric thin film is significantly caused or the valence electrons and holes constituting the conductive base and a metallic very thin film are influenced by the many-body effect, for example, a film thickness such that the dielectric body has a narrow band gap, and by forming the metallic very thin film having a one-atom or one-molecule thickness on the dielectric body by a deposition method. The metallic very thin film or the metallic very thin film multilayer body can be manufactured without producing any cluster thereby to prolong the lifetime of a catalyst and to enhance the degree of integration of an integrated circuit.</p> |
