发明名称 |
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SUBSTRATE, AND METHOD FOR FABRICATING THE SAME |
摘要 |
A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.
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申请公布号 |
US2002137249(A1) |
申请公布日期 |
2002.09.26 |
申请号 |
US19990395261 |
申请日期 |
1999.09.14 |
申请人 |
ISHIDA MASAHIRO;NAKAMURA SHINJI;ORITA KENJI;IMAFUJI OSAMU;YURI MASAAKI |
发明人 |
ISHIDA MASAHIRO;NAKAMURA SHINJI;ORITA KENJI;IMAFUJI OSAMU;YURI MASAAKI |
分类号 |
H01L21/205;H01L21/20;H01L21/338;H01L29/04;H01L29/20;H01L29/205;H01L29/812;H01L29/861;H01L33/00;H01L33/06;H01L33/12;H01L33/14;H01L33/16;H01L33/22;H01L33/32;H01S5/223;H01S5/323;H01S5/343;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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