发明名称 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SUBSTRATE, AND METHOD FOR FABRICATING THE SAME
摘要 A semiconductor device includes: a crystalline substrate including a primary surface and a crystal plane provided within the primary surface so as to have a surface orientation different from a surface orientation of the primary surface; a semiconductor layered structure grown over the crystalline substrate; and an active region provided at a portion in the semiconductor layer structure above the crystal plane.
申请公布号 US2002137249(A1) 申请公布日期 2002.09.26
申请号 US19990395261 申请日期 1999.09.14
申请人 ISHIDA MASAHIRO;NAKAMURA SHINJI;ORITA KENJI;IMAFUJI OSAMU;YURI MASAAKI 发明人 ISHIDA MASAHIRO;NAKAMURA SHINJI;ORITA KENJI;IMAFUJI OSAMU;YURI MASAAKI
分类号 H01L21/205;H01L21/20;H01L21/338;H01L29/04;H01L29/20;H01L29/205;H01L29/812;H01L29/861;H01L33/00;H01L33/06;H01L33/12;H01L33/14;H01L33/16;H01L33/22;H01L33/32;H01S5/223;H01S5/323;H01S5/343;(IPC1-7):H01L21/00 主分类号 H01L21/205
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