| 摘要 |
There is disclosed a method of manufacturing a semiconductor device to fabricate a capacitor structure while preventing a capacitor film from being peeled off, thereby increasing the yield and device reliability. The method comprises the steps of forming a laminated film made up of a close-contact film, a barrier film, and a close-contact film on a wafer, forming a metal film serving as a lower electrode on the laminated film radially inwardly, with respect to the wafer, of an outer edge of the laminated film, coating the metal film with a resist, etching a portion of the laminated film which is exposed radially outwardly, with respect to the wafer, from an outer edge of the metal, using the metal film as a mask, and after removing the resist from the metal film, forming a capacitor film in covering relation to the metal film.
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