发明名称 INFRARED DETECTION ELEMENT AND METHOD FOR FABRICATING THE SAME AND EQUIPMENT FOR MEASURING TEMPERATURE
摘要 [Issue] A thermopile type infrared detection element, specifically, a low-cost infrared detection element which can measure temperature with a higher accuracy. [Solution] The infrared detection element (1) which employs a silicon nitride film as a first structure layer (22) becoming the structure at a thin film part (4) is provided. Since the first structure (22) has an inner tensile stress unlike to a silicon oxide film, occurrence of flexure can e prevented. Furthermore, diodes D1 and D2 can be fabricated on a silicon substrate (2) utilizing the first structure layer (22) as an isolation band, and measurement error of a thermopile (12) can be suppressed by preventing variation in the shape thereof incident to variation of environment, thereby providing a high accuracy infrared detection element in which the cold junction temperature can be detected accurately by means of the diodes D1 and D2.
申请公布号 WO02075262(A1) 申请公布日期 2002.09.26
申请号 WO2002JP00812 申请日期 2002.01.31
申请人 SEIKO EPSON CORPORATION;SATO, SHIGEMI;YAMASHITA, HIDETO;HAGIHARA, TSUTOMU 发明人 SATO, SHIGEMI;YAMASHITA, HIDETO;HAGIHARA, TSUTOMU
分类号 A61B5/01;G01J5/16;H01L23/00;(IPC1-7):G01J1/02;G01J5/02;A61B5/00;H01L27/14;H01L35/32;H01L37/00 主分类号 A61B5/01
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