发明名称 |
INFRARED DETECTION ELEMENT AND METHOD FOR FABRICATING THE SAME AND EQUIPMENT FOR MEASURING TEMPERATURE |
摘要 |
[Issue] A thermopile type infrared detection element, specifically, a low-cost infrared detection element which can measure temperature with a higher accuracy. [Solution] The infrared detection element (1) which employs a silicon nitride film as a first structure layer (22) becoming the structure at a thin film part (4) is provided. Since the first structure (22) has an inner tensile stress unlike to a silicon oxide film, occurrence of flexure can e prevented. Furthermore, diodes D1 and D2 can be fabricated on a silicon substrate (2) utilizing the first structure layer (22) as an isolation band, and measurement error of a thermopile (12) can be suppressed by preventing variation in the shape thereof incident to variation of environment, thereby providing a high accuracy infrared detection element in which the cold junction temperature can be detected accurately by means of the diodes D1 and D2.
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申请公布号 |
WO02075262(A1) |
申请公布日期 |
2002.09.26 |
申请号 |
WO2002JP00812 |
申请日期 |
2002.01.31 |
申请人 |
SEIKO EPSON CORPORATION;SATO, SHIGEMI;YAMASHITA, HIDETO;HAGIHARA, TSUTOMU |
发明人 |
SATO, SHIGEMI;YAMASHITA, HIDETO;HAGIHARA, TSUTOMU |
分类号 |
A61B5/01;G01J5/16;H01L23/00;(IPC1-7):G01J1/02;G01J5/02;A61B5/00;H01L27/14;H01L35/32;H01L37/00 |
主分类号 |
A61B5/01 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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