METHOD FOR FABRICATING SEMICONDUCTOR SUBSTRATE

摘要

PURPOSE: A method for fabricating a semiconductor substrate is provided to uniformly process a wafer and prevent the wafer from being contaminated by particles by varying the intensity of ultrasonic waves applied in an etch process. CONSTITUTION: A non-porous layer(503) is formed on a porous layer(502) formed on the surface of the first substrate(501). The second substrate(505) is attached to the non-porous layer to form an attached substrate wherein the non-porous layer is sandwiched between the first and second substrates. The non-porous layer is left on the second substrate to remove the first substrate from the attached substrate so that the porous layer is exposed to a portion over the non-porous layer on the second substrate. Ultrasonic waves are applied while the second substrate having the exposed second substrate is completely immersed in an etching solution, so that the porous layer is etched to expose the surface of the second substrate by an etch process in which the second substrate is shaken.