发明名称 |
Thin film transistor and method of fabricating the same |
摘要 |
A thin film transistor is provided that includes a substrate, a gate electrode formed on the substrate, and a gate insulating layer formed all over the substrate including the gate electrode. A first semiconductor layer is formed on the gate insulating layer, and a second semiconductor layer is formed on the first semiconductor layer. Source and drain electrodes are separately etched together to expose a prescribed portion surface of the second semiconductor layer over the gate electrode. The source and drain electrodes adjacent to the prescribed portion of the second semiconductor layer are non-linearly inclined at their edges. A method of fabricating a thin film transistor includes forming a gate electrode on a substrate; forming a gate insulating layer on the gate electrode and the substrate, forming a first semiconductor layer on the gate insulating layer and forming a second semiconductor layer on the first semiconductor layer. First and second conductive materials are deposited on the second semiconductor layer. A single etching process is performed on the first and second conductive materials using the same etching gas to expose a prescribed part of the second semiconductor layer over the gate electrode to make the etched first and second conductive materials have a tier structure at edges of the prescribed part.
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申请公布号 |
US6455357(B2) |
申请公布日期 |
2002.09.24 |
申请号 |
US20010810232 |
申请日期 |
2001.03.19 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
KANG SUNG GU;JEON YOUNG JUN |
分类号 |
H01L21/28;H01L21/302;H01L21/336;H01L29/417;H01L29/786;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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