发明名称 Method of embedding contact hole by damascene method
摘要 A carbon film is formed over an insulating film and a contact hole is defined therein by patterning. Copper is formed over an entire surface including the contact hole and polished by chemical mechanical polishing. The polishing of the copper is terminated with the carbon film as an etching stopper thereby to allow the copper to remain in the contact hole alone, whereby an embedded interconnection made up of the copper is formed by a damascene method.
申请公布号 US6455430(B2) 申请公布日期 2002.09.24
申请号 US19990431181 申请日期 1999.11.01
申请人 OKI ELECTRIC INDUSTRY CO., LTD. 发明人 ABE KAZUHIDE
分类号 H01L21/304;H01L21/314;H01L21/321;H01L21/768;(IPC1-7):H01L21/302 主分类号 H01L21/304
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