发明名称 |
Method of fabricating low-dielectric constant interlevel dielectric films for BEOL interconnects with enhanced adhesion and low-defect density |
摘要 |
A substantially defect-free, low-k dielectric film having improved adhesion is provided by (a) applying a silane coupling agent containing at least one polymerizable group to a surface of a substrate so as to provide a substantially uniform coating of said silane-coupling agent on said substrate; (b) heating the substrate containing the coating of the silane-coupling agent at a temperature of about 90° C. or above so as to provide a surface containing Si-O bonds; (c) rinsing the heated substrate with a suitable solvent that is effective in removing any residual silane-coupling agent; and (d) applying a dielectric material to the rinsed surface containing the Si-O bonds.
|
申请公布号 |
US6455443(B1) |
申请公布日期 |
2002.09.24 |
申请号 |
US20010789422 |
申请日期 |
2001.02.21 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
ECKERT ANDREW ROBERT;HAY JOHN C.;HEDRICK JEFFREY CURTIS;LEE KANG-WOOK;LINIGER ERIC GERHARD;SIMONYI EVA ERIKA |
分类号 |
H01L21/312;H01L21/768;(IPC1-7):H01L21/31;H01L21/469 |
主分类号 |
H01L21/312 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|