BiCMOS ESD circuit with subcollector/trench-isolated body mosfet for mixed signal analog/digital RF applications

摘要

An ESD power clamp circuit provides ESD protection for semiconductor chips through a power clamping device. The power clamping device includes a FET and a bipolar element, formed in an isolation region, and a buried diffusion. The buried diffusion is used as a subcollector for the bipolar element, and is used as an isolation for the FET.