发明名称 Method for production of a dfb laser diode having a coupled optical waveguide and a dfb laser diode layer structure
摘要 <p>PCT No. PCT/DE96/00781 Sec. 371 Date Nov. 18, 1997 Sec. 102(e) Date Nov. 18, 1997 PCT Filed May 3, 1996 PCT Pub. No. WO96/37020 PCT Pub. Date Nov. 21, 1996Use of the method allows MRCW high-temperature laser diodes with a coupled optical waveguide to be produced in four epitaxial steps. The advantage is that, of the four epitaxial processes the first two and the last two are carried out virtually immediately successively after one another and an interruption is necessary only to produce a grating. Other components, such as photodiodes for example, can also be produced using the method.</p>
申请公布号 IN188435(B) 申请公布日期 2002.09.21
申请号 IN1996CA28719 申请日期 1996.02.16
申请人 SIEMENS AKTIENGESELLSCHAFT 发明人 MATZ RICHARD;STEGMUELLER BERNHARD
分类号 G02B6/42;G02B6/122;H01S5/00;H01S5/026;H01S5/12;H01S5/227;H01S5/343;(IPC1-7):H01S3/19;G02B6/10 主分类号 G02B6/42
代理机构 代理人
主权项
地址