| 摘要 |
PROBLEM TO BE SOLVED: To stabilize transistor characteristics by a method which in a DRAM, the resistance of word line is lowered, junction leakage is suppressed, contact resistance due to increase in the contact area of a diffusion layer with a extraction electrode is reduced, a DRAM cell is reduced, the breakdown strength between the word line and the extraction electrode is ensured and by extending the effective channel length. SOLUTION: The transistor of a memory element provided with a diffusion layer 13 which is formed on the surface of a semiconductor substrate 11, the word line 16 which is formed inside a groove 14 formed on the semiconductor substrate 11 which includes the diffusion layer 13 and the extraction electrode 21 which is connected to the diffusion layer 13 in a state of being overlapped with the word line 16 via a first insulation film 19 and the transistor of a logic element in which silicide layers 58, 68 are formed on diffusion layers 55, 65 are formed on the same semiconductor substrate 11. In at least one transistor of the logic element, a gate electrode 51 is formed inside the groove 14 which is formed on the semiconductor substrate 11. |
