| 摘要 |
<p>PROBLEM TO BE SOLVED: To realize an efficient solar battery by devising the formation form of a silicon nitride film that is formed as a rear surface passivation film by considering the interference between reflection light on the surface of a rear surface metal electrode layer and reflection light at the boundary of a silicon single-crystal substrate and the silicon nitride film. SOLUTION: When no texture mainly composed of 111} face is formed on both the reverse surface MPP and the light reception surface MPS of the silicon single crystal substrate 3 in the rear surface structure of the solar battery 1, the film thickness of the silicon nitride film 4 at the rear surface side is set to 40 nm-220 nm. Also, when texture formation is made only at the side of the light reception surface MPS, the film thickness of the silicon nitride film 4 at the rear surface side is set to 100 nm-300 nm. Further, when texture formation is made on both the rear surface MPP and the light reception surface MPS, the film thickness of the silicon nitride film 4 at the rear surface side is set to 40 nm-230 nm.</p> |
