| 发明名称 |
ETCHING METHOD OF ORGANIC BASED INSULATING FILM AND DUAL DAMASCENE PROCESS |
| 摘要 |
PROBLEM TO BE SOLVED: To enhance selection rate of an SiOC based low permittivity film and a silicon nitride film while reducing a microtrench during etching. SOLUTION: In etching the SiOC based low permittivity film using a C4 F8 /Ar/ N2 based mixture gas, flow rate ratio of Ar is set at 80% or above.
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| 申请公布号 |
JP2002270586(A) |
申请公布日期 |
2002.09.20 |
| 申请号 |
JP20010065459 |
申请日期 |
2001.03.08 |
| 申请人 |
TOKYO ELECTRON LTD |
发明人 |
IGARASHI YOSHIKI;SUEMASA TOMOKI;INASAWA KOICHIRO |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/311;H01L21/768;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/302 |
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