| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which is suitable for detecting neutrons, is small-sized and low in manufacturing cost, and to provide a method for manufacturing the same. SOLUTION: The semiconductor device comprises a boron-containing layer 4 containing an isotope<10> B and formed on a semiconductor substrate 1. In this device,αrays irradiated by reacting the neutrons irradiated towards the layer 4 with the isotope<10> B are made to plunge into the substrate 1, and an amount of the neutron is detected by electron/hole pairs 8 generated in the substrate.
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