| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can significantly increase short-circuit resistance of a load, even when scale-down of size is further improved. SOLUTION: This semiconductor device is provided with a p<-> -type impurity layer 14, formed on an n<-> -type epitaxial layer 13 of a semiconductor substrate 11, a p<+> -type impurity regions 15 formed at the upper part of the p-type impurity layer 14, by providing the predetermined distance between these regions; a trench 16 which is cut, to the p-type impurity layer 14, up to the depth reaching the n<-> -type epitaxial layer 13 along the p-type impurity layer between the p<+> - type impurity regions 15 which includes a silicon oxide film 17 at the internal wall and is also embedded at its internal side, with polysilicon of the gate material, and the n<+> -type impurity regions 19 arranged in the equal interval along the extending direction of the trench 16 at the upper part of the p-type impurity layer between the upper edge part of the trench 16 and the p<+> -type impurity region 15.
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