| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem in which when the integration degree of a memory cell is increased in a conventional semiconductor storage device, it is difficult to ensure the capacitance of a capacitor required regarding each memory cell and of the probability of generating a soft error becoming high. SOLUTION: The semiconductor storage device is provided with a semiconductor substrate 1, a gate electrode 4 which is formed on the semiconductor substrate 1 by interposing a gate oxide film 3, an insulation layer 7 and an insulation layer 8 which cover the gate electrode 4, a lower-layer capacitor electrode 16 which is formed along the surface part of the layer 8 and an upper-layer capacitor electrode 18 which is formed on the electrode 16 by interposing a dielectric film 17. At least two recesses 14, 15 which are not in a mutually connected state are formed from the surface part of the layer 8 toward the lower part. |
