METHOD FOR FORMING SEMICONDUCTOR THIN FILM, SUBSTRATE THEREWITH MANUFACTURED BY THE SAME, AND SEMICONDUCTOR DEVICE BY USING SUBSTRATE THEREWITH

摘要

PROBLEM TO BE SOLVED: To provide a method for improving the characteristics of a device where the surface largely affects electrical and optical characteristics by changing polarity on the surface of a 3-5 or 2-6 group semiconductor such as GaN and ZnO from a conventional anion surface to a more smooth and inactive cation surface. SOLUTION: A film in the thickness of about several monolayers of metal such a Al is formed inside a 3-5 group or 2-6 group semiconductor film which is epitaxially grown on a sapphire substrate. The polarity on the surface of semiconductor is changed from negative (anion) to positive (cation) at the upper and lower parts of the film. The positive polarity is formed in the epitaxial growth thin film and a polycrystalline thin film of preferred orientation property.