A process chamber (110) capable of processing a substrate (50) in a plasma comprises a dielectric (210) covering a first electrode (220) and a second electrode (230), a conductor (250) supporting the dielectric (210), and a voltage supply (170) to supply an RF voltage to the first electrode (220) or the second electrode (230) in the dielectric (210). The first electrode (220) capacitively couples with a process electrode (225) to energize process gas in the process chamber (110) and RF voltage applied to the second electrode (230) is capacitively coupled to the conductor (250) and through a collar (260) or the second electrode (230) is directly capacitively coupled through the collar (260).
申请公布号
WO02073654(A1)
申请公布日期
2002.09.19
申请号
WO2001US08163
申请日期
2001.03.13
申请人
APPLIED MATERIALS, INC.
发明人
SHAMOUILIAN, SHAMOUIL;KHOLODENKO, ARNOLD;WONG, KWOK, MANUS;WANG, LIANG-GUO;VEYTSER, ALEXANDER, M.;GRIMARD, DENNIS, S.