摘要 |
Semiconductor dot devices include a multiple layer semiconductor structure having a substrate, a back gate electrode layer, a quantum well layer, a tunnel barrier layer between the quantum well layer and the back gate, and a barrier layer above the quantum well layer. Multiple electrode gates are formed on the multi-layer semiconductor with the gates spaced from each other by a region beneath which quantum dots may be defined. Appropriate voltages applied to the electrodes allow the development and appropriate positioning of the quantum dots, allowing a large number of quantum dots be formed in a series with appropriate coupling between the dots. |
申请人 |
WISCONSIN ALUMNI RESEARCH FOUNDATION |
发明人 |
ERIKSSON, MARK, A.;FRIESEN, MARK, G.;JOYNT, ROBERT, J.;LAGALLY, MAX, G.;VAN DER WEIDE, DANIEL, W.;RUGHEIMER, PAUL;SAVAGE, DONALD, E. |