发明名称 Simplified upper electrode contact structure for PIN diode active pixel sensor
摘要 An active pixel sensor having a transparent conductor that directly contacts a conductive element in an interconnection structure to electrically connect the transparent conductor to a pixel sensor bias voltage is provided. The active pixel sensor includes a semiconductor substrate, the interconnection layer, which is formed over the substrate, and a pixel interconnection layer formed over the interconnection layer. Photo sensors that include a pixel electrode, an I-layer, and may include a P-layer are formed over the pixel interconnection layer. The transparent conductor is for med over the photo sensors and the conductive element exposed on the surface of the interconnection layer.
申请公布号 US2002130380(A1) 申请公布日期 2002.09.19
申请号 US20010810852 申请日期 2001.03.16
申请人 THEIL JEREMY A. 发明人 THEIL JEREMY A.
分类号 H01L21/00;H01L27/146;H01L31/00;H01L31/0224;H01L31/105;H01L31/117;H01L33/00;(IPC1-7):H01L21/00 主分类号 H01L21/00
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