发明名称 |
Device produced by a process of controlling grain growth in metal films |
摘要 |
A process for controlling grain growth in the microstructure of thin metal films (e.g., copper or gold) deposited onto a substrate. In one embodiment, the metal film is deposited onto the substrate to form a film having a fine-grained microstructure. The film is heated in a temperature range of 70-100° C. for at least five minutes, wherein the fine-grained microstructure is converted into a stable large-grained microstructure. In another embodiment, the plated film is stored, after the step of depositing, at a temperature not greater than -20° C., wherein the fine-grained microstructure is stabilized without grain growth for the entire storage period.
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申请公布号 |
US2002129879(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US20020050285 |
申请日期 |
2002.01.16 |
申请人 |
DEHAVEN PATRICK W.;GOLDSMITH CHARLES C.;HURD JEFFERY L.;KAJA SURYANARAYANA;LEGERE MICHELE S.;PERFECTO ERIC D.;REESE S. KATHLEEN |
发明人 |
DEHAVEN PATRICK W.;GOLDSMITH CHARLES C.;HURD JEFFERY L.;KAJA SURYANARAYANA;LEGERE MICHELE S.;PERFECTO ERIC D.;REESE S. KATHLEEN |
分类号 |
H01L21/28;C25D5/50;C25D7/00;H01L21/288;H01L21/3205;H01L23/52;H05K1/09;H05K3/22;(IPC1-7):C22F1/14;C22F1/08 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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