| 摘要 |
PURPOSE: A repair circuit of a semiconductor memory device is provided to prevent the semiconductor memory device from decreasing a yield thereof and to improve a productivity thereof by compensating a leakage current caused by a residual through a capacitor although the residual is remained during a fuse cutting process, it is achieved by configuring the repair circuit with connecting the capacitor between a front end of an output block and a ground terminal. CONSTITUTION: A repair circuit of a semiconductor memory device includes a precharge signal input block(10) for precharging a voltage power in response to a precharge signal, a fuse block(20) connected to an output terminal of the precharge signal input block(10) for making an insulation breakdown when an over current flows, an address input block(30) an output block(40) for outputting a programming status of the fuse block(20) in response to the signal of the address input block(30), a latch block(50) for stabilizing an output value of the output block and a capacitor connected between a front end of output and a ground terminal. The address input block(30) is capable of programming and identifying the programmed status by turning on in response to an address input at which a defect is generated by connecting between the fuse block(20) and the ground terminal.
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