Ultra low-k dielectric materials

摘要

The invention relates to a dielectric composition and a process for forming an integrated circuit using the composition. The dielectric composition comprises a polymer precursor that upon heating to a cure temperature cross-links to form an organic polysilica layer and a sufficient amount of porogen that the layer has a porosity of from about 5% to about 80%. The porogen is non-reactive with the polymer precursor. Upon heating to a decomposition temperature, the porogen decomposes to form a gas that diffuses out of the layer.