PAD OF SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A pad of a semiconductor device and a method for fabricating the same are provided to prevent a damage of a passivation layer of the pad in a probing process of the pad of a wafer level test. CONSTITUTION: A pad(411) of a semiconductor device is formed with a conductive layer formed on a semiconductor substrate(401) and a passivation layer(421) formed on a part of the conductive layer. The conductive layer is formed with the first layer(441) and the second layer(431). The second layer(431) is formed on a rim of the first layer(441). The second layer(431) has a stepped portion higher than the stepped portion of the first layer(441). The passivation layer(421) is formed at the outside of the second layer(431). The conductive layer is formed by a metal. The passivation layer(421) is formed by an oxide layer. A conductive line is bonded on the first layer(441).