发明名称 |
Semiconductor device |
摘要 |
There is provided a semiconductor device including a transistor formed by means of a common contact hole that connects a gate electrode, and a diffused layer forming a source/drain terminal; and a semiconductor device comprising the gate electrode of the transistor, and a connecting terminal to which capacitance between substrates and capacitance between the gate electrode and the source/drain terminal are added, thereby improving the soft error resistance caused by alpha rays and neutron beams.
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申请公布号 |
US2002130344(A1) |
申请公布日期 |
2002.09.19 |
申请号 |
US20010003404 |
申请日期 |
2001.12.06 |
申请人 |
NII KOJI;IGARASHI MOTOSHIGE |
发明人 |
NII KOJI;IGARASHI MOTOSHIGE |
分类号 |
H01L29/78;G11C11/412;H01L21/3205;H01L21/768;H01L21/8234;H01L21/8244;H01L27/088;H01L27/10;H01L27/11;(IPC1-7):H01L29/76;H01L29/94;H01L31/062;H01L27/108 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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