| 摘要 |
The present invention provides a method for fabricating a metal-oxide-semiconductor (MOS) transistor on the surface of a semiconductor wafer. The present method first forms a stacked structure comprising a dielectric layer, a doped polysilicon layer, and a sacrificial layer, respectively, in the active area of the surface of the semiconductor wafer. Next, two lightly doped drains are then formed adjacent to the stacked structure. A spacer is then formed around the stacked structure, followed by an ion implantation process to form a source and drain of the MOS transistor. Then, the sacrificial layer is removed to form a trough with the spacer and the doped polysilicon layer. A self-aligned silicide (salicide) process is then performed to form a silicide layer on the surface of the source, drain, and doped polysilicon layer. Finally, a tungsten (W) layer is formed on the surface of each silicide layer and filling the trough to complete the fabrication of the MOS transistor according to the present invention.
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