| 发明名称 |
Built-in self test circuit employing a linear feedback shift register |
| 摘要 |
<p>A built-in self test (BIST) circuit and method is provided for testing a semiconductor memory. A linear feedback shift register (LFSR) is used for addressing the memory locations to be tested. Test data is derived at least partially from the address data generated from the linear feedback shift register. <IMAGE></p> |
| 申请公布号 |
EP1241678(A2) |
申请公布日期 |
2002.09.18 |
| 申请号 |
EP20010305658 |
申请日期 |
2001.06.29 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM, HEON-CHEOL;PARK, JIN-YOUNG |
| 分类号 |
G11C29/20;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/20 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
