HIGH MOLECULAR COMPOUND, RESIST MATERIAL AND PATTERN FORMING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a resist material having small absorption at the wavelength of F2 excimer laser light for exposure, capable of easily forming a fine pattern perpendicular to a substrate and suitable for use as a fine pattern forming material for the production of VLSI. SOLUTION: The high molecular compound has repeating units of formula (1) (where R<1> is a 1-20C linear, branched or cyclic divalent hydrocarbon group and may be a bridged cyclic hydrocarbon group; R<2> is an acid labile group, 0<=m<=3; 0<=n<=3, 0<=o<=3; 0<=p<=3; m+n=3; o+p=3; 0<=n+p<=6; R<3> is an F-free hydrophilic group; and (a) and (b) are each a positive number). The resist material is sensitive to high energy beams and is excellent in sensitivity and resolution at <=200 nm, particularly <=170 nm wavelength and in plasma etching resistance.