发明名称 Capacitor with defect isolation and bypass
摘要 Capacitors having defect isolation and bypass characteristics. The capacitors include a first electrode, a second electrode containing electrode segments, and a dielectric layer interposed between the first electrode and second electrode. The electrode segments of the second electrode are physically separated from other electrode segments. The capacitors further include an interconnection bus electrically coupling the electrode segments of the second electrode. Selective isolation of one or more electrode segments permits isolation and bypass of any defects identified in those electrode segments.
申请公布号 US6452776(B1) 申请公布日期 2002.09.17
申请号 US20000543810 申请日期 2000.04.06
申请人 INTEL CORPORATION 发明人 CHAKRAVORTY KISHORE K.
分类号 H01L21/768;H01L27/08;H05K1/00;H05K1/16;(IPC1-7):H01G4/005 主分类号 H01L21/768
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