发明名称 |
Method for manufacturing dislocation-free silicon single crystal |
摘要 |
A method for manufacturing a dislocation-free silicon single crystal, includes the steps of preparing a silicon seed crystal formed of a dislocation-free single crystal having a boron concentration of 1x1018 atoms/cm3 or more, preparing a silicon melt having a boron concentration which differs from that of the seed crystal by 7x1018 atoms/cm3 or less, and bringing the seed crystal into contact with the silicon melt to grow the silicon single crystal.
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申请公布号 |
US6451108(B2) |
申请公布日期 |
2002.09.17 |
申请号 |
US20010767225 |
申请日期 |
2001.01.23 |
申请人 |
PRESIDENT OF SHINSHU UNIVERSITY |
发明人 |
HOSHIKAWA KEIGO;HUANG XINMING;FUKAMI TATSUO;TAISHI TOSHINORI |
分类号 |
C30B29/06;C30B13/00;C30B13/34;C30B15/00;C30B15/36;(IPC1-7):C30B15/20 |
主分类号 |
C30B29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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