| 发明名称 |
Directing a flow of gas in a substrate processing chamber |
| 摘要 |
A substrate processing chamber 30 comprising a first gas distributor 65 adapted to provide a process gas into the chamber 30 to process the substrate 25, a second gas distributor 215 adapted to provide a cleaning gas into the chamber 30 to clean the chamber, and an exhaust 90 to exhaust the process gas or cleaning gas from the chamber 30.
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| 申请公布号 |
US6450117(B1) |
申请公布日期 |
2002.09.17 |
| 申请号 |
US20000633494 |
申请日期 |
2000.08.07 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
MURUGESH LAXMAN;KRISHNARAJ PADMANABAN;COX MICHAEL;LAI CANFENG;DUBEY NARENDRA;CHO TOM K.;GONDHALEKAR SUDHIR RAM;PANG LILY L. |
| 分类号 |
C23C16/44;C23C16/455;H01J37/32;H01L21/205;H01L21/302;H01L21/3065;H01L21/31;(IPC1-7):C23C16/00;H05H1/00;H01L21/00 |
主分类号 |
C23C16/44 |
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