发明名称 IMPROVED DOUBLE CHAMBER ION IMPLANTATION SYSTEM
摘要 An improved double chamber ion source (48) comprising a plasma generating chamber (50), a charge exchange chamber (52) and a divider structure (56) therebetween. The charge exchange chamber (52) includes magnetic shielding material (66) to reduce exposure of interior components to magnetic field lines externally generated. The double compartment ion source (48) further comprises inclusion of a heat shield (72) and/or a cooling system (76) to overcome deleterious effects caused by increased temperature in the plasma generating chamber (50). The divider structure (56) has a plurality of apertures (58) having a configuration (82, 84) to reduce surface area on the divider structure (56) in the charge exchange chamber (52).
申请公布号 WO02071816(A2) 申请公布日期 2002.09.12
申请号 WO2002US07127 申请日期 2002.03.07
申请人 ADVANCED TECHNOLOGY MATERIALS, INC. 发明人 VELLA, MICHAEL, C.
分类号 H01J27/14;H01J37/08 主分类号 H01J27/14
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