| 摘要 |
<p>The invention concerns a method whereby annular substrates (20) are stacked inside a chamber where they define an volume inside (24) and a volume outside (26) the stack. A gas phase containing at least a precursor of a matrix material to be deposited inside the porosity of the substrates is channelled into the chamber towards a first (24) of the two volumes and a residual gas phase is extracted from the chamber from the other volume (26). One or several escape passages (22) communicate the volumes with each other, outside the substrates. The total cross-section of the escape passages ranges between a minimum value such that a maximum pressure of gas phase in the first volume is not exceeded until the densification is completed, and a maximum value such that a differential pressure is established between the two volumes at the very start of the densification.</p> |
