| 摘要 |
A light-emitting device includes: a semiconductor structure formed on one side of a substrate, the semiconductor structure having a plurality of semiconductor layers and an active region within the layers; and first and second conductive electrodes contacting respectively different semiconductor layers of the structure; the substrate comprising a material having a refractive index n>2.0 and light absorption coefficient alpha, at the emission wavelength of the active region, of alpha>3 cm-1. In a preferred embodiment, the substrate material has a refractive index n>2.3, and the light absorption coefficient, alpha, of the substrate material is alpha<1 cm-1.
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