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发明名称
Verfahren zum Herstellen einer Halbleiteranordnung mit vergrabener Kontaktstruktur
摘要
申请公布号
DE69622781(D1)
申请公布日期
2002.09.12
申请号
DE1996622781
申请日期
1996.04.26
申请人
NEC CORP., TOKIO/TOKYO
发明人
YAMAMORI, ATSUSHI
分类号
H01L21/3205;H01L21/28;H01L21/74;H01L21/768;H01L23/522;(IPC1-7):H01L21/74
主分类号
H01L21/3205
代理机构
代理人
主权项
地址
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