| 摘要 |
<p>PCT No. PCT/GB94/02531 Sec. 371 Date Jun. 5, 1996 Sec. 102(e) Date Jun. 5, 1996 PCT Filed Nov. 17, 1994 PCT Pub. No. WO95/16280 PCT Pub. Date Jun. 15, 1995Porous semiconductor material in the form of at least partly crystalline silicon is produced with a porosity in excess of 90% determined gravimetrically, and voids, crazing and peeling are substantially not observable by scanning electron microscopy at a magnification of 7,000. The porous silicon is dried by supercritical drying. The silicon material has good luminescence properties together with good morphology and crystallinity.</p> |
