| 发明名称 |
Method for fabricating semiconductor device |
| 摘要 |
An n type InP buried layer 22 with Se or S added in an above 5x1018 cm-3 concentration is formed on an active layer mesa stripe 18 having a surface with an SiO2 film 16 formed on at a peripheral part of the mesa stripe 18 other than the surface with the SiO2 film 16 formed on. Accordingly, the buried layer can be grown without the over growth.
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| 申请公布号 |
US2002127759(A1) |
申请公布日期 |
2002.09.12 |
| 申请号 |
US20010946686 |
申请日期 |
2001.09.06 |
| 申请人 |
FUJITSU QUANTUM DEVICES LIMITED |
发明人 |
WATANABE TAKAYUKI |
| 分类号 |
H01L31/02;H01L31/0304;H01L31/173;H01L31/18;H01L33/00;H01S5/026;H01S5/227;H01S5/30;H01S5/32;(IPC1-7):H01L21/00 |
主分类号 |
H01L31/02 |
| 代理机构 |
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代理人 |
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