| 摘要 |
A semiconductor device on a wafer is formed by lithography with the following steps of: coating (13) a lithography resist onto said wafer in a coating means (5), exposing (14) said wafer to an irradiation through a reticle in an exposure tool (4), stabilizing (15) said lithography resist for activating chemical reaction and developing said lithography resist in said predetermined areas in a developer means (6) so as to reveal a predetermined lithography resist pattern on the wafer surface, stabilizing (16) the lithography resist in a stabilization means (7) for strengthening said pattern on the wafer surface, performing (17) a metrology inspection of said lithography resist pattern on said wafer surface in a metrology tool (8), etching, wet processing or implanting ions (18) into said wafer in a processing cell (9), wherein said metrology inspection is performed by atomic force microscopy in a atomic force microscopy module (11) immediately after developing and baking said lithography resist adjacent to said stabilization means (7). |
