Fabrication method for a semiconductor integrated circuit device including a field effect transistor, a capacitor and a resistor.,申请号EP19950105966-传众专利搜索

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发明名称	Fabrication method for a semiconductor integrated circuit device including a field effect transistor, a capacitor and a resistor.
摘要
申请公布号	EP0682371(B1)	申请公布日期	2002.09.11
申请号	EP19950105966	申请日期	1995.04.21
申请人	NEC CORPORATION	发明人	YOSHIMORI, MASANORI
分类号	H01L27/04;H01L21/822;H01L21/8234;H01L27/06;(IPC1-7):H01L27/06	主分类号	H01L27/04
代理机构		代理人
主权项
地址

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