发明名称 SENSOR USING ATTENUATION OF TOTAL REFLECTION
摘要 <p>PROBLEM TO BE SOLVED: To provide a sensor of high measuring precision using attenuation of tolal reflection. SOLUTION: A high frequency RF is superimposed from a high frequency electric power source 3 onto a drive current I of a semiconductor laser 14 to drive the semiconductor laser 14 by the high frequency superimposition, in a surface plasmon sensor provided with a dielectric block, a metal film 12 formed on one face thereof to contact with a sample 11, the semiconductor laser 14 for generating a light beam 13, an optical system 15 for guiding the beam 13 to the dielectric block and for making the beam 13 incident to be brought into a total reflection condition in an interface between the dielectric block and the metal film 12 and to provide various incident angles including a generation condition of a surface plasmon, and a photodetecting means for detecting the light beam 13 total-reflected on the interface.</p>
申请公布号 JP2002257719(A) 申请公布日期 2002.09.11
申请号 JP20010391014 申请日期 2001.12.25
申请人 FUJI PHOTO FILM CO LTD 发明人 NAYA MASAYUKI
分类号 G01N21/27;G01N21/41;(IPC1-7):G01N21/27 主分类号 G01N21/27
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