发明名称 |
PHOTOMASK BLANK, PHOTOMASK AND METHOD FOR PRODUCING THESE |
摘要 |
PURPOSE: To obtain a photomask blank capable of easily controlling etching rate and giving a perpendicular section shape, to obtain a photomask blank and a photomask uniform in film quality and having high quality and to make the photomask adaptable to further miniaturization and integration of a semiconductor integrated circuit. CONSTITUTION: In the photomask blank having at least one chromium-base light shielding film and at least one chromium-base antireflection film on a light transmissive substrate, each of the light shielding film and the antireflective film is formed from a chromium-base film containing oxygen, nitrogen and carbon and the carbon content is stepwise or continuously lowered from the surface side toward the light transmissive substrate. |
申请公布号 |
KR20020070791(A) |
申请公布日期 |
2002.09.11 |
申请号 |
KR20020007675 |
申请日期 |
2002.02.09 |
申请人 |
SHIN-ETSU CHEMICAL CO., LTD. |
发明人 |
INAZUKI YUKIO;KANEKO HIDEO;KOJIMA MIKIO;MARUYAMA TAMOTSU;OKAZAKI SATOSHI;SHINAGAWA TSUTOMU |
分类号 |
C23C14/06;G03F1/08;G03F1/14;G03F1/46;G03F1/50;G03F1/54;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 |
主分类号 |
C23C14/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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