发明名称 PHOTOMASK BLANK, PHOTOMASK AND METHOD FOR PRODUCING THESE
摘要 PURPOSE: To obtain a photomask blank capable of easily controlling etching rate and giving a perpendicular section shape, to obtain a photomask blank and a photomask uniform in film quality and having high quality and to make the photomask adaptable to further miniaturization and integration of a semiconductor integrated circuit. CONSTITUTION: In the photomask blank having at least one chromium-base light shielding film and at least one chromium-base antireflection film on a light transmissive substrate, each of the light shielding film and the antireflective film is formed from a chromium-base film containing oxygen, nitrogen and carbon and the carbon content is stepwise or continuously lowered from the surface side toward the light transmissive substrate.
申请公布号 KR20020070791(A) 申请公布日期 2002.09.11
申请号 KR20020007675 申请日期 2002.02.09
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 INAZUKI YUKIO;KANEKO HIDEO;KOJIMA MIKIO;MARUYAMA TAMOTSU;OKAZAKI SATOSHI;SHINAGAWA TSUTOMU
分类号 C23C14/06;G03F1/08;G03F1/14;G03F1/46;G03F1/50;G03F1/54;G03F7/20;H01L21/027;(IPC1-7):G03F1/08 主分类号 C23C14/06
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