STORAGE ELECTRODE LAYER OF SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A storage electrode layer of a semiconductor memory device and a method for forming the same are provided to stabilize a geometric structure of the storage electrode layer by forming a base portion wider than a tower portion. CONSTITUTION: A storage electrode layer(50) of a semiconductor memory device is formed with a base portion(52) and a tower portion(54). An upper portion of the base portion and a bottom portion of the tower portion(54) are located at the same height. The base portion(52) has a cylindrical shape. The tower portion(54) has a shape of pipe. A bottom portion of the base portion(52) is contacted with an upper face of a buried contact plug(37). The height of the storage electrode layer is more than 15,000 angstrom. The height of base portion(52) is 1,000 to 5,000 angstrom. The height of tower portion is 5,000 to 15,000 angstrom.