| 摘要 |
PROBLEM TO BE SOLVED: To form a fine pattern having both of a groove pattern and a hole pattern in the process of manufacturing a semiconductor device without carrying out vacuum vapor deposition. SOLUTION: A three-layer resist having a silylation resist 14 as the intermediate layer is formed by coating ((a), (b)). After the upper layer resist pattern 16 is formed ((c), (d)), the resist is exposed to a gas 17 containing Si element (e) to silylate the intermediate layer to form a Si-containing region 18 (f). Then a hole pattern 20 is formed in the upper layer resist pattern 16 (g), and the intermediate layer and the lower layer resist are etched to form a hole pattern 21 (h). After the upper layer resist pattern 16 is removed (i), the part not silylated is subjected to dry etching to form a groove pattern 22 (j). |
