发明名称 POSITIVE ELECTRON BEAM RESIST COMPOSITION
摘要 PURPOSE: A positive electron beam resist composition is provided to improve the resist pattern profile and the changes in the line width by the post-exposure in a vacuum chamber. CONSTITUTION: The positive electron beam resist composition comprises a resin which contains a structural unit represented by the formula X, and whose solubility to an alkaline developing solution increases by the action of an acid; and a compound generating an acid by the irradiation of electron beam, wherein R1 and R2 which are the same and different each other, are H or an alkyl group of C1-C4; R3 and R4 which are the same and different each other, are H or a substituted or unsubstituted straight, branched or cyclic alkyl group; R5 is a substituted or unsubstituted straight, branched or cyclic alkyl group or a substituted or unsubstituted aryl group; m is an integer of 1-20; and n is an integer of 0-5.
申请公布号 KR20020070800(A) 申请公布日期 2002.09.11
申请号 KR20020008641 申请日期 2002.02.19
申请人 FUJI PHOTO FILM CO., LTD. 发明人 FUJIMORI TORU;MIZUTANI KAZUYOSHI;YASUNAMI SHOICHIO
分类号 G03F7/00;G03F7/039;(IPC1-7):G03F7/039 主分类号 G03F7/00
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