发明名称 |
Method for detecting end point of plasma etching, and plasma etching apparatus |
摘要 |
Certain embodiments provide a plasma etching apparatus and a method for detecting the end point of plasma etching, which can more accurately detect the end point of plasma etching. A radiofrequency wave generated in a radiofrequency generating system 5 propagates through a lead line 30 and is applied to a cathode 9 in a plasma chamber 1. Plasma 11 thereby is generated in the plasma chamber and selectively etches a semiconductor wafer 12. A RF probe 8 measures the voltage and current of the radiofrequency wave flowing in the lead line 30. A determination system 15 may determine the end point of the plasma etching on the basis of either the voltage or current, whichever changes first.
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申请公布号 |
US6447691(B1) |
申请公布日期 |
2002.09.10 |
申请号 |
US19990287611 |
申请日期 |
1999.04.07 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
DENDA ATSUSHI;ITO YOSHINAO |
分类号 |
C23F4/00;H01J37/32;H01L21/302;H01L21/3065;(IPC1-7):H01L21/306 |
主分类号 |
C23F4/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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